| Specifications | · Cu coated Si Wafer (4 inch size) · Thickness of highly oriented polycrystalline Cu <111> film: 100 nm · Thickness of Ta diffusion barrier: 20 nm · 4 inch dia x0.525 mm thickness Si wafer (Prime Grade) · P type, B doped, <100> orientation, SSP · Resistivities: 1-20 ohm-cm · Surface Roughness: as grown , RA < 10 nm · Package: One 1000 class clean room with 100 class plastic bag |
查看誠信檔案
皖公網安備 34012302000974號
